Chapter 12, Problem 105b
Wide band-gap semiconductors have a band gap between 2 and 7 electron volts (eV), where 1 eV = 96.485 kJ/mol. The wide band-gap semiconductor GaN, used to construct the laser in Blu-ray DVD players, has a band gap of 3.44 eV. The material in the laser, GaxIn1-xN, has some indium substituted for gallium. (b) If the light from the device is blue, does partial substitution of indium for gallium increase or decrease the band gap of GaxIn1-xN compared to GaN?
Video transcript
A photovoltaic cell contains a p–n junction that that converts solar light to electricity. An optimum semiconductor would have its band-gap energy matched to the wavelength of maximum solar intensity at the Earth's surface. (a) What is the color and approximate wavelength of maximum solar intensity at the Earth's surface? Refer to the figure for Problem 12.102.
A photovoltaic cell contains a p–n junction that that converts solar light to electricity. An optimum semiconductor would have its band-gap energy matched to the wavelength of maximum solar intensity at the Earth's surface. (b) Which of the following semiconductors absorb at a wavelength matched with maximum solar intensity? CdTe with a band-gap energy of 145 kJ/mol or ZnSe with a band-gap energy of 248 kJ/mol.
The YBa2Cu3O7 superconductor can be synthesized by the solgel method from a stoichiometric mixture of metal ethoxides followed by heating in oxygen. How many grams of Y(OCH2CH3)3 and how many grams of Ba(OCH2CH3)2 are required to react with 75.4 g of Cu(OCH2CH3)2 and an excess of water? Assuming a 100% yield, how many grams of YBa2Cu3O7 are obtained?