Chapter 12, Problem 104
Gallium arsenide, a material used to manufacture laser printers and compact disc players, has a band gap of 130 kJ/mol. Is GaAs a metallic conductor, a semiconductor, or an electrical insulator? With what group 4A element is GaAs isoelectronic? (Isoelectronic substances have the same number of electrons.)
Video transcript
A photovoltaic cell contains a p–n junction that converts solar light to electricity. (a) Silicon semiconductors with a band-gap energy of 107 kJ/mol are commonly used to make photovoltaic cells. Calculate the wavelength that corresponds to the band-gap energy in silicon.
A photovoltaic cell contains a p–n junction that that converts solar light to electricity. An optimum semiconductor would have its band-gap energy matched to the wavelength of maximum solar intensity at the Earth's surface. (a) What is the color and approximate wavelength of maximum solar intensity at the Earth's surface? Refer to the figure for Problem 12.102.
A photovoltaic cell contains a p–n junction that that converts solar light to electricity. An optimum semiconductor would have its band-gap energy matched to the wavelength of maximum solar intensity at the Earth's surface. (b) Which of the following semiconductors absorb at a wavelength matched with maximum solar intensity? CdTe with a band-gap energy of 145 kJ/mol or ZnSe with a band-gap energy of 248 kJ/mol.
Wide band-gap semiconductors have a band gap between 2 and 7 electron volts (eV), where 1 eV = 96.485 kJ/mol. The wide band-gap semiconductor GaN, used to construct the laser in Blu-ray DVD players, has a band gap of 3.44 eV. The material in the laser, GaxIn1-xN, has some indium substituted for gallium. (b) If the light from the device is blue, does partial substitution of indium for gallium increase or decrease the band gap of GaxIn1-xN compared to GaN?