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Ch.12 - Solids and Modern Materials
Chapter 12, Problem 111b

Silicon carbide, SiC, has the three-dimensional structure shown in the figure.
3D structure of silicon carbide (SiC) showing atomic arrangement for bonding analysis.
(b) Would you expect the bonding in SiC to be predominantly ionic, metallic, or covalent?

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Step 1: Identify the elements present in silicon carbide (SiC). Silicon (Si) and carbon (C) are the elements involved.
Step 2: Determine the type of elements involved. Silicon is a metalloid and carbon is a non-metal.
Step 3: Analyze the electronegativity difference between silicon and carbon. Silicon has an electronegativity of 1.90 and carbon has an electronegativity of 2.55.
Step 4: Consider the bonding characteristics. A small electronegativity difference (less than 1.7) typically indicates covalent bonding.
Step 5: Examine the 3D structure of SiC. The structure shows a network of atoms bonded in a lattice, which is characteristic of covalent network solids.

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Key Concepts

Here are the essential concepts you must grasp in order to answer the question correctly.

Bonding Types

There are three primary types of chemical bonding: ionic, covalent, and metallic. Ionic bonds form between atoms with significantly different electronegativities, resulting in the transfer of electrons. Covalent bonds involve the sharing of electrons between atoms with similar electronegativities, while metallic bonds occur in metals where electrons are delocalized, allowing for conductivity and malleability.
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Electronegativity

Electronegativity is a measure of an atom's ability to attract and hold onto electrons. In the context of bonding, the difference in electronegativity between two atoms can help predict the type of bond that will form. A large difference typically indicates ionic bonding, while a small difference suggests covalent bonding. Silicon (Si) and carbon (C) have similar electronegativities, which influences the nature of their bonding in silicon carbide.
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Crystal Structure

The crystal structure of a material describes the orderly arrangement of atoms within it. In silicon carbide (SiC), the three-dimensional structure shown in the image indicates a covalent network, where each silicon atom is covalently bonded to carbon atoms in a tetrahedral arrangement. This structure contributes to the material's hardness and thermal stability, characteristics typical of covalent compounds.
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Related Practice
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Energy bands are considered continuous due to the large number of closely spaced energy levels. The range of energy levels in a crystal of copper is approximately 1×10−19 J. Assuming equal spacing between levels, one can approximate the spacing between energy levels by dividing the range of energies by the number of atoms in the crystal. b. Determine the average spacing in J between energy levels in the copper metal in part (a).

Textbook Question

Sodium oxide (Na2O) adopts a cubic structure with Na atoms represented by green spheres and O atoms by red spheres.

(c) The unit cell edge length is 5.550 Å. Determine the density of Na2O.

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In their study of X-ray diffraction, William and Lawrence Bragg determined that the relationship among the wavelength of the radiation 1l2, the angle at which the radiation is diffracted 1u2, and the distance between planes of atoms in the crystal that cause the diffraction (d) is given by nl = 2d sin u. X rays from a copper X-ray tube that have a wavelength of 1.54 Å are diffracted at an angle of 14.22 degrees by crystalline silicon. Using the Bragg equation, calculate the distance between the planes of atoms responsible for diffraction in this crystal, assuming n = 1 (first-order diffraction).

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